The two IBS facilities in France and the UK provide backup for each other inside IBS.
Simultaneous implantation on the whole wafer
Conformal 3D implantation
Ultra low energy (down to 30 eV) with no risk of energy contamination
From ultra low energy to high doses on most wafer typesand sizes ( 2” to 12" )with a large variety of species
SiC implantation up to 600 °C
3D conformal doping
Solar cell manufacturing
Surface treatment ( planar to 3D )
From our two production facilities in France and the UK, IBS operates a world class ion implantation
and full process manufacturing line service. IBS can process production volumes
from 2” to 12″ diameter substrates, as well as custom shapes, thicknesses and materials.