ION IMPLANTATION

IBS is the perfect partner for supporting your ion implantation needs,
whether it is production or R&D, IBS has a solution to fit all customer’s needs.

From our two production facilities in France and the UK, IBS operates a world class ion implantation

and full process manufacturing line service. IBS can process production volumes

from 2” to 12″  diameter substrates, as well as custom shapes, thicknesses and materials.

IBS locations Table of elements Technical capabilities
Beamline implantation services
  • Production
    Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment
    Back-up: Breakdown, temporary overlay, wafer size upgrade…
  • R&D implantation
    Specific processes: product development, test & evaluation
    Various substrates, shapes
    Exotic species
    Heated/cooled, various angles…
  • SiC implantation
    From -80 °C up to +600 °C implant
    From samples to 6” wafer
    Si, B, Al, N, C, P and much more
    From 5 to 400 keV
    Specific SiC ion implant simulations
  • Plasma Immersion Ion Implant services (PIII)
  • PULSION®
    Available species:
    • Doping: AsH3, PH3, BF3, B2H6
    • Material modification: Ar, H2, He, CH4, SiH4, SiF4, Al, CF4, C2H2
    Wafer size: from samples up to 300 mm
    From medium to high doses
    Extremely low to medium acceleration voltage: 50 V - 20 kV
    Conformal doping for 3D
  • PIII & laser annealing combinaison
    Annealing (and diffusion) depth is controlled very precisely
    Room temperature doping
    Wafer integrity
    Junction depth from 10 nm to 15 nm
    Application: Back side implantation, power components
  • SCOPE OF WORK

    Dose / Energy

    Wafer types

    IBS can implant different types of wafers from 2" to 12''

    • Si
    • Si thin wafers / Taiko wafers
    • SiC
    • GaN
    • InP / GaAs
    • InSb
    • HgCdTe
    • LiNbO3
    • Sapphire / Diamond / Quartz

    TURNKEY SERVICES

    COMPONENTS
    PRODUCTION
    SiC COMPONENT
    FOUNDRY
    PROCESS
    DEVELOPMENT
    Manufacturing
    line
    Characterization
    PROCESS DEVELOPEMENT
    & SMALL SIZE PRODUCTION EXAMPLES
  • SENSORS
    Radiation (Dosimeter gamma, Photodiodes)
    Chemical ( CHEMFET)
    Thermal (PT100)
    Mechanical
  • PASSIVES
    Resistors and capacitors
    Yielding components
  • POWER COMPONENTS
    Si Mosfet (2,4 kV) for military application
    1 kV Bipolar for static circuit breaker
    3,3 kV IGBT
  • On top of traditional semiconductor process steps IBS has developed specific technology bricks to meet SiC device manufacturing requirement
  • Inorganic masking & Hot implantation
    High temperature implant annealing
    Plasma etching
    Fast annealing for metallization
  • IBS provides you with its skills and its know how to allow you to develop your own component
  • Process simulation using SILVACO software
    Process integration
    Electrical simulations
    Design of masks
  • With its production line, IBS can produce components based on you requirement. Our fab operates with 2” to 6” compatible systems
    Thanks to the CIMPACA capabilities , IBS can propose a complete set of tools that will perform the following tasks:
  • ON LINE CHARACTERIZATION
    mechanical profilometer
    Optical thickness measurment
    Sheet resistance + prober IBS
  • PHYSICO & DEFCT ANALYSIS
    D-SIMS & ToF-SIMS
    Micro Auger & XPS
    Dual beam FIB & TEM
    IR Thermography
    Laser decapsulation
  • OFF LINE CHARACTERIZATION
    Layers thicknesses & morphology
    Optical 3D Profilometer
    Micro Raman
    AFM Veeco
    SEM
  • SINGLE STEP PROCESS

    From single step process to complete product

  • Thin film deposition: PVD (Sputtering), PECVD
  • Thermal oxidation & diffusion
  • RTA annealing
  • Wet (chemical) & dry (RIE) etch
  • Photolithography
  • We operate with a complete semiconductor manufacturing line!