Most new technologies are driving the “MORE THAN MOORE” and the “MORE MOORE ” domains
Ion implantation, essential to those technologies, requires :
Higher doses at lower energies with high throughput
Implantation of 3D structures
Material modification i.e. use of ion implant for non doping applications (etch selectivity, contact improvement, patterning, layer synthesis, strain engineering, etc)
Large range of species
Ion implantation tools must have :
High flexibility & versatility
Low foot print
With 30 years of implant background, IBS is the only company that can offer both a range of new implant tools & full implant services.
IBS PULSION equipment meet < 10 nm requirements
Continued scaling of non-planar HP multigate devices in all aspects:
EOT, junctions, mobility enhancement, new channel materials,
parasitic series resistance, contact silicidation.
• Materials compatibility
• Process integration challenges
Plasma immersion ion implantation is a versatile process technology with wide applications in microelectronics processing & materials engineering.
Simultaneous implantation of the full wafer
Ultra low energy ( down to 30 eV)
Conformal 3D implantation
Ideal tool for
3D doping (FINFET, DTI, pillars ...) for advanced logic & memory
Material modification to tailor stress, to engineer contact & Vt, to help process integration
Very high doses needed for DPG application
R&D lab, universities and institutes are looking for versatile
ion implantation tools to implant a range of small
and large substrates and different materials.
IBS offers a range of equipment.
Researchers have chosen the IMC & PULSION series
systems by a large majority for the ease of use
and the wide range of the technological capabilities.
The IMC series addresses the lack of modern equipment for new type of production implants and advanced research. The IMC tool has been designed to be easy to use, easy to maintain, and with high reliability.
Up to 4 active gas lines/4 remote neutrals lines and optional vaporizer and liquid delivery
Ion sources choice: IHC, sputtering...
Manual or automatic loading end-station with hot or cold platen
Intuitive and user friendly interface
Simple design, easy troubleshooting
Direct ethernet or modem access for fast diagnosis
Equipment pre-wired for expected future source and/or platen options
Spare electronics channels and software structure designed for upgrades
Ideal tool for
Unconventional species (Al, Yb, Te, etc)
On compounds and new substrates (GaAs, SiC, InSb, HgCdTe, LiNbO3…)
Outside of standard boundaries (+600°C, -100°C…)
SiC DevicesPULSION® FOR POWER DEVICE APPLICATIONCOMPOUND SEMICONDUCTORS
Silicon carbide (SiC): smaller, faster, more robust, this material will supplant silicon in converters for electrical vehicles, industrial motors and power grids.
Manufacturing SiC components requires dedicated ion implantation tools.
Implants up to 800 keV
Intense current and stable Al beam
High temperature platen
Gate technology engineering for MOS SiC
Contact doping improvement
High temperature implantation
Wafer handling for brittle materials
High throughput at high doses and low energy
Low-mechanical stress, stable single wafer platen for thinned wafers; reduced breakage
Conformal trench sidewall doping (even for high aspect ratio).
Similar doping results to beamline implantation
Higher throughput and performance
Possible lower energy control for advanced devices
Gate trench sidewall doping (low dose, conformal)
Backside contact doping (high dose, after back thinning)
Data communications, telecommunication systems and security
require more and more compound semiconductors such as
optoelectronics and RF amplifiers. Due to material and contamination
concerns, a manufacturing line must operate with dedicated tools.
400 kV beam line for implant up to 800 keV
Gentle handling for brittle materials
Wide range of implant species, among which: Be, Si, Mg, Cs, Yb...