technology with wide applications in microelectronics
processing & materials engineering.
IBS PULSION equipment meet < 10 nm requirements
Continued scaling of non-planar HP multigate devices in all aspects:
EOT, junctions, mobility enhancement, new channel materials,
parasitic series resistance, contact silicidation.
• Materials compatibility
• Process integration challenges
Medium current production implanter for:
RF and power devices, sensors, opto-electronics manufacturing
on Si, SiC, GaAs, GaN, LiTaO3, HgCdTe, LiNbO3, InP…
Silicon carbide (SiC): smaller, faster, more robust, this material will supplant silicon in converters for electrical vehicles, industrial motors and power grids.
Manufacturing SiC components requires dedicated ion implantation tools.
Data communications, telecommunication systems and security
require more and more compound semiconductors such as
optoelectronics and RF amplifiers. Due to material and contamination
concerns, a manufacturing line must operate with dedicated tools.