Most new technologies are driving the “MORE THAN MOORE” and the “MORE MOORE ” domains

Ion implantation, essential to those technologies, requires :
  • Higher doses at lower energies with high throughput
  • Implantation of 3D structures
  • Material modification i.e. use of ion implant for non doping applications (etch selectivity, contact improvement, patterning, layer synthesis, strain engineering, etc)
  • Hot implantation
  • Large range of species
  • Ion implantation tools must have :
  • High flexibility & versatility
  • High productivity
  • Easy maintenance
  • Low foot print
  • With 30 years of implant background, IBS is the only company that can offer both a range of new implant tools & full implant services.

    IBS PULSION equipment meet < 10 nm requirements

    Continued scaling of non-planar HP multigate devices in all aspects:
    EOT, junctions, mobility enhancement, new channel materials,
    parasitic series resistance, contact silicidation.

    • Materials compatibility

    • Process integration challenges


    Plasma immersion ion implantation is a versatile process
    technology with wide applications in microelectronics
    processing & materials engineering.
  • Offers
    Simultaneous implantation of the full wafer
    Ultra low energy ( down to 30 eV)
    Conformal 3D implantation
  • Ideal tool for
    3D doping (FINFET, DTI, pillars ...) for advanced logic & memory
    Material modification to tailor stress, to engineer contact & Vt, to help process integration
    Very high doses needed for DPG application
  • R&D lab, universities and institutes are looking for versatile
    ion implantation tools to implant a range of small
    and large substrates and different materials.
    IBS offers a range of equipment.

    Researchers have chosen the IMC & PULSION series
    systems by a large majority for the ease of use
    and the wide range of the technological capabilities.


    The IMC series addresses the lack of modern equipment
    for new type of production implants and advanced research.
    The IMC tool has been designed to be easy to use,
    easy to maintain, and with high reliability.
  • Offers
    Up to 4 active gas lines/4 remote neutrals lines and optional vaporizer and liquid delivery
    Ion sources choice: IHC, sputtering...
    Manual or automatic loading end-station with hot or cold platen
    Intuitive and user friendly interface
    Simple design, easy troubleshooting
    Direct ethernet or modem access for fast diagnosis
    Equipment pre-wired for expected future source and/or platen options
    Spare electronics channels and software structure designed for upgrades
  • Ideal tool for
    Unconventional species (Al, Yb, Te, etc)
    On compounds and new substrates (GaAs, SiC, InSb, HgCdTe, LiNbO3…)
    Outside of standard boundaries (+600°C, -100°C…)

    Silicon carbide (SiC): smaller, faster, more robust, this material will supplant silicon in converters for electrical vehicles, industrial motors and power grids.
    Manufacturing SiC components requires dedicated ion implantation tools.

    IMC advantages
    Implants up to 800 keV
    Intense current and stable Al beam
    High temperature platen
    PULSION® advantages
    Gate technology engineering for MOS SiC
    Contact doping improvement
    Customer requirements
    High temperature implantation
    Wafer handling for brittle materials
    PULSION® advantages
    High throughput at high doses and low energy
    Low-mechanical stress, stable single wafer platen for thinned wafers; reduced breakage
    Conformal trench sidewall doping (even for high aspect ratio).
    Customer requirements
    Similar doping results to beamline implantation
    Higher throughput and performance
    Possible lower energy control for advanced devices
    Gate trench sidewall doping (low dose, conformal)
    Backside contact doping (high dose, after back thinning)

    Data communications, telecommunication systems and security
    require more and more compound semiconductors such as
    optoelectronics and RF amplifiers. Due to material and contamination
    concerns, a manufacturing line must operate with dedicated tools.

    IMC advantages
    400 kV beam line for implant up to 800 keV
    Gentle handling for brittle materials
    Wide range of implant species, among which: Be, Si, Mg, Cs, Yb...
    Typical applications
    HgCdTe IR sensor and imager
    InP laser
    GaAs RF power amplifier and switches
    Power GaN power components