Most new technologies are driving the “MORE THAN MOORE” and the “MORE MOORE ” domains
Ion implantation, essential to those technologies, requires :
Higher doses at lower energies with high throughput
Implantation of 3D structures
Material modification i.e. use of ion implant for non doping applications (etch selectivity, contact improvement, patterning, layer synthesis, strain engineering, etc)
Large range of species
Ion implantation tools must have :
High flexibility & versatility
Low foot print
With 30 years of implant background, IBS is the only company that can offer both a range of new implant tools & full implant services.
IBS PULSION equipment meet < 10 nm requirements
Continued scaling of non-planar HP multigate devices in all aspects:
EOT, junctions, mobility enhancement, new channel materials,
parasitic series resistance, contact silicidation.
• Materials compatibility
• Process integration challenges
Plasma immersion ion implantation is a versatile process technology with wide applications in microelectronics processing & materials engineering.
Simultaneous implantation of the full wafer
Ultra low energy ( down to 30 eV)
Conformal 3D implantation
Ideal tool for
3D doping (FINFET, DTI, pillars ...) for advanced logic & memory
Material modification to tailor stress, to engineer contact & Vt, to help process integration
Very high doses needed for DPG application
Medium current production implanter for:
RF and power devices, sensors, opto-electronics manufacturing
on Si, SiC, GaAs, GaN, LiTaO3, HgCdTe, LiNbO3, InP…
FLEXion 200/400, FLEXion 400-SiC
To fulfill manufacturer’s needs for compound Semiconductors and SiC components, IBS has designed a family of implanters avoiding the costly complexity of a 300 mm Si machine downgraded for SiC.
High beam current
Extended life ion source (>300 hrs)
Enhanced single or multi-charged Al beam generation
High resolution analyzer magnet for multi-charged and high AMU beams
650 °C fast temperature ramp-up/ramp-down platen for SiC
Optimized throughput for non Si materials
Quad implant, autotune up to 10 chained implantations
From coupons to 200 mm, parallel scanning for 200 mm wafers
Up to 1.2 MeV
High efficiency ion sources (Indirect heated Cathode, ECR)
Up to 8 different implant gases
SiC DevicesPULSION® FOR POWER DEVICE APPLICATIONCOMPOUND SEMICONDUCTORS
Silicon carbide (SiC): smaller, faster, more robust, this material will supplant silicon in converters for electrical vehicles, industrial motors and power grids.
Manufacturing SiC components requires dedicated ion implantation tools.
Implants up to 800 keV
Intense current and stable Al beam
High temperature platen
Gate technology engineering for MOS SiC
Contact doping improvement
High temperature implantation
Wafer handling for brittle materials
High throughput at high doses and low energy
Low-mechanical stress, stable single wafer platen for thinned wafers; reduced breakage
Conformal trench sidewall doping (even for high aspect ratio).
Similar doping results to beamline implantation
Higher throughput and performance
Possible lower energy control for advanced devices
Gate trench sidewall doping (low dose, conformal)
Backside contact doping (high dose, after back thinning)
Data communications, telecommunication systems and security
require more and more compound semiconductors such as
optoelectronics and RF amplifiers. Due to material and contamination
concerns, a manufacturing line must operate with dedicated tools.
400 kV beam line for implant up to 800 keV
Gentle handling for brittle materials
Wide range of implant species, among which: Be, Si, Mg, Cs, Yb...