This ENIAC JU project aims to promote the FD-SOI (Fully Depleted SOI) technology. The goal is to cope with high current leakage and variability in CMOS transistor miniaturization.
PLACES2BE is devoted to the industrialization of 28nm and 20nm FD-SOI platforms.
IBS with its Plasma ion immersion
implantation tool (Pulsion), take part to the development of this French technology, issued from the CEA/LETI research and implemented by ST Microelectronics.
For more details about ENIAC JU - PLACES2BE project
For more details about Pulsion, PIII tool made by IBS