IBS offer very low energy capacity implantation services from 20 eV up to 20 kV for your internal research and development projects.

		PIII Services Whether you need to explore new technologies or evaluate thePULSION Plasma immersion ion implantation tool , you can send us your substrates for implant. For more details, click here
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		Room Temperature Doping By combining PIII and laser annealing, IBS offers Room Temperature Doping. Plasma Immersion Ion Implantation is a new technique for low energy ion implant. It allows ultra shallow junctions to be formed. Laser anneal is very complementary: the annealing (and diffusion) depth is controlled very precisely and the wafer remains at room temperature. For more details, click here
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