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IBS offers Plasma Immersion Ion Implant services to address capacities, R&D or process investigation needs:
- USJ,
- high k,
- polysilicon/3D/Trench doping,
- solar cells,
- flat panels or
- power components.
By combining PIII and laser annealing, IBS offers Room Temperature Doping as well.
For more details about our ion implantation capacities, please see our relevant page.
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