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IBS has 5 equipments available for thin films deposition: sputtering, evaporation (for metal layers mainly), and PECVD for dielectric layers.
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Metal layers
Our equipment capability in reactive mode enable to deposit Ti02, HfO3, Si02… the uniformity is 5% (on wafer 6 inches), the substrat size are 2 inches up to 8 inches. Target material available: Ti, Cu, Al, AlSi, AlSiCu, Cr, Ni...
 For more details, please contact :information@ion-beam-services.fr |
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Dielectric layers
Polyimide photodefineable and non-photodefineable , Si02 (thermal oxide, PECVD oxide), Nitride (LPCVD) are available for you at IBS.
For more details, please contact :information@ion-beam-services.fr |
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