You can benefit of the Plasma immersion ion implantation (PIII) tool PULSION in IBS plant to run some tests of this new technology for your R&D projects: USJ, high k, Polysilicon/3D/Trench doping, or your R&D applications : solar cells, flat panels or power components.

By combining PIII and laser annealing, IBS offers Room Temperature Doping as well.

For more details about our ion implantation capacities, please see our relevant page.