Based on our proprietary polarisation technology with a unique pulsed plasma configuration, Pulsion achieves high process stability at ultra low energy while offering process versatility at both 200 & 300mm.

Designed for volume manufacturing, the low acquisition cost makes Pulsion the tool practical for R&D also.

Pulsion the next generation Plasma Ion Implanter, offers the industry a new solution to Ion Implantation for applications such as :

• Very low energy for USJ for 32-22 nodes while maintaining high throughput, with controllable depth down to 2 nm
• High productivity and low CoO for S/D and polysilicon doping (DRAM, FLASH)
• Excellent conformality for 3D doping for Fin FETS and trenches
• Yield improvement of Silicon Solar Cells.